Publication:

Atomic Layer Deposition of (Sc_2O_3) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices

Thumbnail Image

Open/View Files

ALD Sc2O3 for passivating GaN transistors_APL101,232109(2012).pdf (943.46 KB)

Date

2012

Authors

Published Version

10.1063/1.477071

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics
The Harvard community has made this article openly available. Please share how this access benefits you.

Research Projects

Organizational Units

Journal Issue

Citation

Wang, Xinwei, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tomás Palacios, and Roy G. Gordon. 2012. Atomic layer deposition of \(Sc_2O_3\) for passivating AIGaN/GaN high electron mobility transistor devices. Applied Physics Letters 101: 232109.

Abstract

Polycrystalline, partially epitaxial (Sc_2O_3) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD (Sc_2O_3) film as the insulator layer, the (Sc_2O_3)/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors showed excellent electrical performance with a high I({on})/I({off}) ratio of over 10(^8) and a low subthreshold slope of 75 mV/dec. The UV/NH(_4)OH surface treatment on AlGaN/GaN prior to ALD was found to be critical for achieving these excellent figures. In addition, the (Sc_2O_3)dielectric is found to be negatively charged, which facilitates the enhancement-mode operation. While bare (Sc_2O_3) suffers from moisture degradation, depositing a moisture blocking layer of ALD (Al_2O_3) can effectively eliminate this effect.

Description

Other Available Sources

Research Data

Keywords

aluminium compounds, atomic layer deposition, electrical conductivity, epitaxial layers, gallium compounds, high electron mobility transistors, high-k dielectric thin films, III-V semiconductors, insulating thin films, MISFET, passivation, scandium compounds, wide band gap semiconductors

Terms of Use

This article is made available under the terms and conditions applicable to Other Posted Material (LAA), as set forth at Terms of Service

URI

http://nrs.harvard.edu/urn-3:HUL.InstRepos:10055799

Collections

FAS Scholarly Articles

Endorsement

Review

Supplemented By

Related Stories