Publication: Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
Date
2012
Published Version
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Publisher
American Institute of Physics
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Citation
Wang, Xinwei, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tomás Palacios, and Roy G. Gordon. 2012. Atomic layer deposition of \(Sc_2O_3\) for passivating AIGaN/GaN high electron mobility transistor devices. Applied Physics Letters 101: 232109.
Research Data
Abstract
Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors showed excellent electrical performance with a high I\(_{on}\)/I\(_{off}\) ratio of over 10\(^8\) and a low subthreshold slope of 75 mV/dec. The UV/NH\(_4\)OH surface treatment on AlGaN/GaN prior to ALD was found to be critical for achieving these excellent figures. In addition, the \(Sc_2O_3\)dielectric is found to be negatively charged, which facilitates the enhancement-mode operation. While bare \(Sc_2O_3\) suffers from moisture degradation, depositing a moisture blocking layer of ALD \(Al_2O_3\) can effectively eliminate this effect.
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Keywords
aluminium compounds, atomic layer deposition, electrical conductivity, epitaxial layers, gallium compounds, high electron mobility transistors, high-k dielectric thin films, III-V semiconductors, insulating thin films, MISFET, passivation, scandium compounds, wide band gap semiconductors
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