Publication: Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–Insulator Transition Characteristics
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Date
2012
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Elsevier
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Citation
Cui, Yanjie, Xinwei Wang, You Zhou, Roy Gerald Gordon, and Shriram Ramanathan. 2012. Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–Insulator Transition Characteristics. Journal of Crystal Growth 338(1): 96–102.
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Abstract
We report on growth and physical properties of vanadium dioxide \((VO_2)\) films on model conducting oxide underlayers (Nb-doped \(SrTiO_3\) and \(RuO_2\) buffered \(TiO_2\) single crystals). The \(VO_2\) films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The \(VO_2\) film grown on Nb doped \(SrTiO_3\) shows over two orders of magnitude metal–insulator transition, while \(VO_2\) film on \(RuO_2\) buffered \(TiO_2\) shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the \(VO_2\) films grown on Nb-doped \(SrTiO_3\) substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.
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Keywords
Characterization, Substrates, Physical vapor deposition processes, VO2, Metal–insulator transition materials
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