Publication: Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
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Date
2014
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AIP Publishing
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Citation
Park, Helen Hejin, Ashwin Jayaraman, Rachel Heasley, Chuanxi Yang, Lauren Hartle, Ravin Mankad, Richard Haight, David B. Mitzi, Oki Gunawan, and Roy G. Gordon. 2014. “Atomic Layer Deposition of Al-Incorporated Zn(O,S) Thin Films with Tunable Electrical Properties.” Appl. Phys. Lett. 105 (20) (November 17): 202101. Portico. doi:10.1063/1.4901899.
Research Data
Abstract
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm−3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm−3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.
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Keywords
Zinc Oxysulfide, Buffer Layer, Atomic Layer Deposition
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