Publication: Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared
Date
2014
Published Version
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Publisher
Wiley-Blackwell
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Citation
Zhang, Huiliang, Igor Aharonovich, David R. Glenn, Richard Schalek, Andrew P. Magyar, Jeff W. Lichtman, Evelyn L. Hu, and Ronald L. Walsworth. 2014. “Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared.” Small 10 (10) (March 4): 1908–1913. doi:10.1002/smll.201303582.
Research Data
Abstract
Nanodiamonds doped with silicon-vacancy (Si-V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non-bleaching, narrow-linewidth emission at wavelengths within the near-IR window of biological tissue. CL emission intensity from negative charge-state Si-V centers is greatly enhanced by increasing the nitrogen concentration during nanodiamond growth.
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Keywords
cathodoluminescence, nanodiamond, Silicon vacancy (Si-V), correlated cathodoluminescence and secondary electron microscopy, charge state
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