Publication: Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface
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Date
2001
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American Physical Society (APS)
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Altfeder, I. B., J. A. Golovchenko, and V. Narayanamurti. 2001. “Confinement-Enhanced Electron Transport Across a Metal-Semiconductor Interface.” Physical Review Letters 87 (5) (July). doi:10.1103/physrevlett.87.056801.
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Abstract
We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.
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