Publication:
Programmable Resistive-Switch Nanowire Transistor Logic Circuits

No Thumbnail Available

Date

2014-08-20

Published Version

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society (ACS)
The Harvard community has made this article openly available. Please share how this access benefits you.

Research Projects

Organizational Units

Journal Issue

Citation

Shim, Wooyoung, Jun Yao, and Charles M. Lieber. 2014. “Programmable Resistive-Switch Nanowire Transistor Logic Circuits.” Nano Lett. 14 (9) (September 10): 5430–5436. doi:10.1021/nl502654f.

Research Data

Abstract

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.

Description

Other Available Sources

Keywords

Nanoprocessor, nanocomputing, nanoelectronics, programmable logic arrays, crossbar arrays, memory

Terms of Use

This article is made available under the terms and conditions applicable to Open Access Policy Articles (OAP), as set forth at Terms of Service

Endorsement

Review

Supplemented By

Referenced By

Related Stories