InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching

Abstract

In this work, we report on a 3D device fabrication technology achieved by applying a novel anisotropic wet etching method. By aligning channel structures along different crystal orientations, high performance 3D InGaAs devices with different channel shapes such as fins, nanowires and waves have been demonstrated. With further optimizing off-state leakage path by barrier engineering, a record high ION/IOFF over 10(8) and minimum I OFF~3pA/um have been obtained from InGaAs FinFET device. Scaling metrics for InGaAs GAA MOSFETs and FinFETs are systematically studied with Lch from 800 nm down to 50 nm and WFin/WNW from 100 nm down to 20 nm which shows an excellent immunity to short channel effects.