Publication: Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]
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2000
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Evans, P. G., O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko. 2000. Comment on "Low-Temperature Homoepitaxial Growth on High-Miscut Si(111) Mediated by Thin Overlayers of Pb" [Appl. Phys. Lett. 75, 2954 (1999)]. Applied Physics Letters 77, no. 16: 2616. doi:10.1063/1.1318930.
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epitaxy
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