We report on growth and physical properties of vanadium dioxide ((VO_2)) films on model conducting oxide underlayers (Nb-doped (SrTiO_3) and (RuO_2) buffered (TiO_2) single crystals). The (VO_2) films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The (VO_2) film grown on Nb doped (SrTiO_3) shows over two orders of magnitude metal–insulator transition, while (VO_2) film on (RuO_2) buffered (TiO_2) shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the (VO_2) films grown on Nb-doped (SrTiO_3) substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.
