Browsing FAS Scholarly Articles by Author "Haakenaasen, R."

Now showing items 1-3 of 3

    • Absence of discontinuities in ion-channeling parameters for YBa2 Cu3O7−δ thin films 

      Hecker, N. E.; Haakenaasen, R.; Golovchenko, Jene Andrew; Chervinsky, J; Eom, C. B. (American Physical Society (APS), 1997)
      We have measured the ion-channeling minimum yield (χmin) and angular width (Ψ1/2) for Y, Ba, Cu, and O in 2000 Å (001)-oriented films of YBa2Cu3O7−δ on MgO. The measurements mapped out a 30 K region around the critical ...

    • High quality crystalline YBa2Cu3O7−δ films on thin silicon substrates 

      Haakenaasen, R.; Fork, D. K.; Golovchenko, Jene Andrew (AIP Publishing, 1994)
      YBa2Cu3O7−δ(001) (YBCO)films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate buffer layers: Yttrium‐stabilized zirconia (YSZ) and CeO2. All layers were grown by an in situpulsed ...

    • Quantum Channeling Effects for 1 MeV Positrons 

      Haakenaasen, R.; Hau, Lene V.; Golovchenko, Jene Andrew; Palathingal, J. C.; Peng, J. P.; Asoka-Kumar, P.; Lynn, K. G. (American Physical Society (APS), 1995)
      A high resolution angular study of positrons transmitted through a thin single crystal of Si clearly reveals a detailed fine structure due to strong quantum channeling effects. The beam transmitted in the forward direction ...