Browsing FAS Scholarly Articles by Keyword "GaN"

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    • ALD Growth of MgxCa1xO on GaN and Its Band Offset Analysis 

      Gong, Xian; Lou, Xiabing; Kim, Sang Bok; Gordon, Roy (American Chemical Society (ACS), 2021-02-08)
      Atomic layer deposition (ALD) processes were developed for growing MgO and CaO on GaN substrates using a home-built ALD reactor with amidinate-based precursors. An optimal deposition condition was then determined to deposit ...

    • Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition 

      Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D.; Gordon, Roy Gerald (American Chemical Society (ACS), 2016)
      We demonstrate for the first time that a singlecrystalline epitaxial MgxCa1−xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the ...