Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si

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Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si

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Title: Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si
Author: Aziz, Michael; Barvosa-Carter, William

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Citation: Barvosa-Carter, William and Michael J. Aziz. 2001. Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si. Applied Physics Letters 79(3): 356-358.
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Abstract: The effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V*, with V*11=(+0.14+/-0.04) and (+0.17+/-0.02) times the atomic volume, in intrinsic and B-doped material, respectively.
Published Version: http://dx.doi.org/10.1063/1.1386399
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja132.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797369
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