Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si
Aziz - Time-resolved measurements (81.16Kb)
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CitationBarvosa-Carter, William and Michael J. Aziz. 2001. Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si. Applied Physics Letters 79(3): 356-358.
AbstractThe effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V*, with V*11=(+0.14+/-0.04) and (+0.17+/-0.02) times the atomic volume, in intrinsic and B-doped material, respectively.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797369
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