Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer
Published Version
https://doi.org/10.1063/1.122692Metadata
Show full item recordCitation
Evans, P. G., O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko. 1998. Low-Temperature Homoepitaxial Growth on Si(111) through a Pb Monolayer. Applied Physics Letters 73, no. 21: 3120. doi:10.1063/1.122692.Abstract
A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Filmsgrown on substrates miscut 2.3° towards [112̄] show good crystalline quality down to 310 °C.Terms of Use
This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAACitable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:29405826
Collections
- FAS Scholarly Articles [18295]
Contact administrator regarding this item (to report mistakes or request changes)